AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF281SR1 MRF281ZR1
Table 3. Electrical Characteristics
(TC
=25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
=20μAdc)
VGS(th)
2.4
3.2
4
Vdc
Gate Quiescent Voltage
(VDS
=26Vdc,ID
=25mAdc)
VGS(q)
3
4.1
5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=0.1A)
VDS(on)
0.18
0.24
0.30
Vdc
Dynamic Characteristics
Input Capacitance
(VDS
=26Vdc,VGS
=0,f=1.0MHz)
Ciss
?
5.5
?
pF
Output Capacitance
(VDS
=26Vdc,VGS
=0,f=1.0MHz)
Coss
?
3.3
?
pF
Reverse Transfer Capacitance
(VDS
=26Vdc,VGS
=0,f=1.0MHz)
Crss
?
0.17
?
pF
Functional Tests
(In Freescale Test Fixture)
Common--Source Amplifier Power Gain
(VDD
=26Vdc,Pout
= 4 W PEP, IDQ
=25mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
11
12.5
?
dB
Drain Efficiency
(VDD
=26Vdc,Pout
=4W,IDQ
=25mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
30
?
?
%
Input Return Loss
(VDD
=26Vdc,Pout
= 4 W PEP, IDQ
=25mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
?
-- 1 6
-- 1 0
dB
Intermodulation Distortion
(VDD
=26Vdc,Pout
= 4 W PEP, IDQ
=25mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
?
-- 3 1
?
dBc
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